| PART |
Description |
Maker |
| MIE-534H4 534H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| MIE-324A4 324A4 |
Infrared Emitting Diodes (IRED)
AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| VSMY2850G |
High Speed Infrared Emitting Diodes
|
Vishay Siliconix
|
| VSLB4940 |
High Speed Infrared Emitting Diode
|
Vishay Siliconix
|
| VSLB9530S |
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
|
Vishay Siliconix
|
| VSMB14940 |
High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW
|
Vishay Siliconix
|
| TSHA5503 TSHA550 TSHA5500 TSHA5501 TSHA5502 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
VISAY[Vishay Siliconix]
|
| TSHG6200 |
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
|
VISAY[Vishay Siliconix]
|
| TSMF3710-GS18 TSMF3710 TSMF3710-GS08 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
VISAY[Vishay Siliconix]
|
| TSMF3710 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
Vishay Intertechnology,Inc.
|
| TSHG8400 TSHG840009 |
High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
|
http://
Vishay Siliconix
|
